4466 datasheet pdf storage

These are stress ratings only, and functionaloperation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications. Ao4496 symbol min typ max units bv dss 30 v 1 tj 55c 5 igss 100 na vgsth 1. Dds direct digital synthesis technology seframsefram a menu driven front panel with an easytoread graphix lcd display makes the sefram 4415 easy to operate. Ao4456 symbol min typ max units bv dss 30 v vds 30v, v gs 0v 0. Pchannel logic level enhancement mode field effect transistor p2003evg sop8 leadfree nikosem 2 oct202004 dynamic input capacitance c iss 1610 output capacitance c oss 410 reverse transfer capacitance c rss v gs 0v, v ds 15v, f 1mhz 200 pf total gate charge2 q g 17 24 gatesource charge2 q gs 5 gatedrain charge2 q gd v ds 0. Maximum bodydiode continuous current vgs 0v, v ds 0v, f1mhz vgs 0v, v ds 15v, f1mhz input capacitance a output capacitance is 1a,v gs 0v forward transconductance.

Output sink current ma v cc 5v25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 90 100. Fds6900asd fds6900as dual nch powertrench syncfet general description the fds6900as is designed to replace two single so8 mosfets and schottky diode in synchronous dc. Symbolvdsvgsidmtj, tstgsymboltypmax3440 datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Max4465max4469 lowcost, micropower, sc70sot238, microphone preamplifiers with complete shutdown 5 80 90 85 100 95 110 105 115 125 120 0 1. Ja 31 59 maximum junctiontoambient a 40 gatesource voltage 20 v mj avalanche current c 18 19 a a 10. Product specification sheet recombinant human gst s11. Download the complete datasheet 1 indicative typical values 2 indicative typical. Fds6675bz mosfet pchannel, powertrench 30 v, 11 a, m. Max4466 datasheetpdf 2 page maxim integrated products. High current capability high surge current capability high reliability high efficiency low power loss low cost low forward voltage drop pb rohs free mechanical data. This device is suitable for use as a load switch or in pwm applications. Tps51117 single synchronous stepdown controller datasheet. Ao4466 nchannel enhancement mode field effect transistor. Aosmd, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Nchannel enhancement mode field effect transistor, ao4466 datasheet, ao4466 circuit, ao4466 data sheet. Electrical ratings st8812fx 210 1 electrical ratings table 1. Junction and storage temperature range 55 to 150 power dissipation b pd parameter typ max units cw r. Lowcost, micropower, sc70sot238, microphone preamplifiers. The storagetek sl150 modular tape librarys base module provides up to 360 tb with storagetek lto 8 halfheight tape drives and each expansion module adds an additional 360 tb of capacity as your storage needs grow. Dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. Enables wide pvdd range, from 8 v to 24 v speaker protection, easy listening, nightmode listening efficient classd operation eliminates.

Tstg storage temperature 55 150 c 1 stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. Lowcost, micropower, sc70sot238, microphonepreamplifiers with complete shutdown2absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. Csd18533kcs 60 v nchannel nexfet power mosfet datasheet. Operation from split power supply is also possible and the low power. Absolute maximum ratings ta 25 c, unless otherwise noted parameter symbol 10 s steady state unit drainsource voltage vds 30 v gatesource voltage vgs 20 continuous drain current tj 150 c a ta 25 c id 7. Characteristic symbol min typ max unit test condition. Max4465max4469 lowcost, micropower, sc70sot238, microphone preamplifiers with complete shutdown a v pin max4465 max4466 max4467 max4468. To ensure your services stay robust, pure service orchestrator selfheals protecting you against issues such as node failure and array performance or capacity limits. For example, pure service orchestrator helps prevent accidental data corruption by ensuring a storage volume is bound to a single persistent volume claim at any given time. Creating a customized storage solution that optimizes your space and dollars within the context of your specific storage requirements is a process that requires a close look at your needs and a close relationship with an expert. Ao4466 30v nchannel mosfet general description the ao4466 uses advanced trench technology to provide excellent r dson and low gate charge. Amd gseries processor etx cpu module online from elcodis, view and download som4466 pdf datasheet, embedded microcontroller or microprocessor modules specifications.

Thermal characteristics symbol parameter conditions min typ max unit thermal. On semiconductor this pchannel mosfet is produced using on semiconductors advanced powertrench process that has been especially tailored to minimize the onstate resistance. Fds6679az pchannel powertrench mosfet fds6679az rev. Operating junction and storage temperature range tj, tstg 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junctiontoambienta t. Product specification sheet recombinant human gst t11. The unique rubber adhesive system provides quick stick and conforms to irregular and low surface energy lse materials. Parameters changes and data entry can be made using the rotary knob. Operating junction and storage temperature range t j, tstg i 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient mosfet a t 10 sec r 34 41 maximum junctiontoambient mosfet a steady state thja 67 80 cw maximum junctiontofoot drain steady state r thjf 15 19 notes a. As358358a358b output low power dual operational amplifiers description the as358358a358b consists of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. However, they may be subjected to some slight variations due to our ongoing research programmes. Flasharraym chassis 5u 11u 1439 2099 watts nominal draw 110 lbs 49. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Technical data and information are to the best of our knowledge at the time of publication.